Analysis of interface electronic structure in InxGa1ÀxNÕGaN heterostructures
نویسندگان
چکیده
Capacitance–voltage profiling was used to measure interfacial polarization charge densities and conduction-band offsets at InxGa12xN/GaN heterojunction interfaces for x50.054 and 0.09. A variant of the conventional analysis technique used to deduce interface charge density and band-offset values from capacitance–voltage data was developed and applied. Conduction-band offsets of 0.0960.07 and 0.2260.05 eV are obtained for x50.054 and 0.09, respectively. Polarization charge densities derived from these measurements are (1.8060.32)310 and (4.38 60.36)310 e/cm for x50.054 and 0.09, respectively. These values are somewhat lower than those predicted theoretically, but are in good agreement with values inferred from a substantial body of optical data reported for InxGa12xN/GaN quantum-well structures. © 2004 American Vacuum Society. @DOI: 10.1116/1.1768190#
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